Suppression of leakage current and reduction in device-todevice variability will be key challenges for sub-45nm CMOS technologies. Non-classical transistor structures such as the ...
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS in nano-scale circuits. In this paper, it is observed that in spite of improved device charact...
FinFET technology has been proposed as a promising alternative for deep sub-micro bulk CMOS technology, because of its better scalability. Previous work have studied the performan...
Feng Wang 0004, Yuan Xie, Kerry Bernstein, Yan Luo
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
Physics-based compact modeling, as opposed to the conventional empirical approach, is emphasized for nanoscale nonclassical CMOS. UFDG, a physics-based compact model for generic d...
Vishal P. Trivedi, Jerry G. Fossum, Leo Mathew, Mu...