The emerging three-dimensional (3D) chip architectures, with their intrinsic capability of reducing the wire length, is one of the promising solutions to mitigate the interconnect...
Emerging fast, non-volatile memories (e.g., phase change memories, spin-torque MRAMs, and the memristor) reduce storage access latencies by an order of magnitude compared to state...
Adrian M. Caulfield, Todor I. Mollov, Louis Alex E...
Three-dimensional (3-D) integrated circuits have emerged as promising candidates to overcome the interconnect bottlenecks of nanometer scale designs. While they offer several othe...
Gian Luca Loi, Banit Agrawal, Navin Srivastava, Sh...
Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory (NVM) technology that has the potential to replace the conventional on-chip SRAM caches for designing a more ...
Adwait Jog, Asit K. Mishra, Cong Xu, Yuan Xie, Vij...
To meet conflicting flexibility, performance and cost constraints of demanding signal processing applications, future designs in this domain will contain an increasing number of a...