15 search results - page 1 / 3 » High Read Stability and Low Leakage Cache Memory Cell |
ISCAS
2007
IEEE
13 years 11 months ago
2007
IEEE
- Data in conventional six transistor (6T) static random access memory (SRAM) cells are vulnerable to noise due to the direct access to the data storage nodes through the bit lines...
TVLSI
2008
13 years 4 months ago
2008
Data stability of SRAM cells has become an important issue with the scaling of CMOS technology. Memory banks are also important sources of leakage since the majority of transistors...
VLSID
2006
IEEE
13 years 10 months ago
2006
IEEE
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
VLSID
2009
IEEE
14 years 5 months ago
2009
IEEE
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...
JCP
2008
13 years 4 months ago
2008
Semiconductor manufacturing process scaling increases leakage and transistor variations, both of which are problematic for static random access memory (SRAM). Since SRAM is a criti...