6 search results - page 1 / 2 » Integrated Current Sensing Device for Micro IDDQ Test |
ATS
1998
IEEE
13 years 9 months ago
1998
IEEE
A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement...
ITC
2003
IEEE
13 years 10 months ago
2003
IEEE
: Empirical analyses of the IDDQ signatures of 0.18 µm devices indicate that IDDQ currents exhibit hysteresis. A newly proposed test method, SPIRIT (Single Pattern Iteration IDDQ ...
ICRA
2003
IEEE
13 years 10 months ago
2003
IEEE
- Bundled multi-walled carbon nanotubes (MWNT) were successfully and repeatably manipulated by AC electrophoresis to form resistive elements between Au microelectrodes and were dem...
MTDT
2003
IEEE
13 years 10 months ago
2003
IEEE
ct Defect-based testing for digital logic concentrates primarily on methods of test application, including for example at-speed structural tests and IDDQ testing. In contrast, defe...
ISCAS
2003
IEEE
13 years 10 months ago
2003
IEEE
Bulk multi-walled carbon nanotube (MWNT) were successfully and repeatably manipulated by AC electrophoresis to form resistive elements between Au microelectrodes and were demonstr...