In this work we propose a methodology to self-consistently solve leakage power with temperature to predict thermal runaway. We target 28nm FinFET based circuits as they are more p...
: With technology scaling, elevated temperatures caused by increased power density create a critical bottleneck modulating the circuit operation. With the advent of FinFET technolo...
— It has been the conventional assumption that, due to the superlinear dependence of leakage power consumption on temperature, and widely varying on-chip temperature profiles, a...
Yongpan Liu, Robert P. Dick, Li Shang, Huazhong Ya...
The nonuniform substrate thermal profile and process variations are two major concerns in the present-day ultradeep submicrometer designs. To correctly predict performance/ leakage...
Power dissipation is unevenly distributed in modern microprocessors leading to localized hot spots with significantly greater die temperature than surrounding cooler regions. Exc...