Increasing source voltage (Source-Biasing) is an efficient technique for reducing gate and sub-threshold leakage of SRAM arrays. However, due to process variation, a higher source...
Swaroop Ghosh, Saibal Mukhopadhyay, Kee-Jong Kim, ...
— Reducing the leakage power in embedded SRAM memories is critical for low-power applications. Raising the source voltage of SRAM cells in standby mode reduces the leakage curren...
The detection of cell stability and data retention faults in SRAMs has been a time consuming process. In this paper we discuss a new design for test technique called Weak Write Tes...
Critical issues in designing a high speed, low power static RAM in deep submicron technologies are described along with the design techniques used to overcome them. With appropria...
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...