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» Low power SRAM techniques for handheld products
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DAC
2006
ACM
14 years 6 months ago
Self-calibration technique for reduction of hold failures in low-power nano-scaled SRAM
Increasing source voltage (Source-Biasing) is an efficient technique for reducing gate and sub-threshold leakage of SRAM arrays. However, due to process variation, a higher source...
Swaroop Ghosh, Saibal Mukhopadhyay, Kee-Jong Kim, ...
ISCAS
2007
IEEE
167views Hardware» more  ISCAS 2007»
14 years 1 days ago
An Adaptive Sleep Transistor Biasing Scheme for Low Leakage SRAM
— Reducing the leakage power in embedded SRAM memories is critical for low-power applications. Raising the source voltage of SRAM cells in standby mode reduces the leakage curren...
Afshin Nourivand, Chunyan Wang, M. Omair Ahmad
ITC
1997
IEEE
107views Hardware» more  ITC 1997»
13 years 10 months ago
Weak Write Test Mode: An SRAM Cell Stability Design for Test Technique
The detection of cell stability and data retention faults in SRAMs has been a time consuming process. In this paper we discuss a new design for test technique called Weak Write Tes...
Anne Meixner, Jash Banik
VLSID
2002
IEEE
142views VLSI» more  VLSID 2002»
14 years 6 months ago
Architecture and Design of a High Performance SRAM for SOC Design
Critical issues in designing a high speed, low power static RAM in deep submicron technologies are described along with the design techniques used to overcome them. With appropria...
Shobha Singh, Shamsi Azmi, Nutan Aarawal, Penaka P...
TVLSI
2008
197views more  TVLSI 2008»
13 years 5 months ago
Leakage Minimization of SRAM Cells in a Dual-Vt and Dual-Tox Technology
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
Behnam Amelifard, Farzan Fallah, Massoud Pedram