170 search results - page 1 / 34 » Modeling and analyzing NBTI in the presence of Process Varia... |
ISQED
2011
IEEE
12 years 8 months ago
2011
IEEE
With continuous scaling of transistors in each technology generation, NBTI and Process Variation (PV) have become very important silicon reliability problems for the microprocesso...
MICRO
2008
IEEE
13 years 11 months ago
2008
IEEE
—Negative bias temperature instability (NBTI), which reduces the lifetime of PMOS transistors, is becoming a growing reliability concern for sub-micrometer CMOS technologies. Par...
DATE
2010
IEEE
13 years 9 months ago
2010
IEEE
Abstract—Negative bias temperature instability (NBTI) significantly affects nanoscale integrated circuit performance and reliability. The degradation in threshold voltage (Vth) d...
ISQED
2009
IEEE
13 years 11 months ago
2009
IEEE
—As device feature size continues to shrink, reliability becomes a severe issue due to process variation, particle-induced transient errors, and transistor wear-out/stress such a...
DATE
2010
IEEE
13 years 9 months ago
2010
IEEE
We model and verify analog designs in the presence of noise and process variation using an automated theorem prover, MetiTarski. Due to the statistical nature of noise, we propose ...