19 search results - page 1 / 4 » Nanometer Device Scaling in Subthreshold Circuits |
DAC
2007
ACM
14 years 5 months ago
2007
ACM
DATE
2005
IEEE
13 years 10 months ago
2005
IEEE
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...
ASPDAC
2007
ACM
13 years 8 months ago
2007
ACM
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
ISLPED
2009
ACM
13 years 11 months ago
2009
ACM
In this paper, we observe that minimum energy Emin of subthreshold logic dramatically increases when reaching 45 nm node. We demonstrate by circuit simulation and analytical model...
DT
2006
13 years 4 months ago
2006
The ITRS (International Technology Roadmap for Semiconductors) predicts aggressive scaling down of device size, transistor threshold voltage and oxide thickness to meet growing de...