— This paper describes a new power minimizing method by optimizing supply voltage control and minimizing leakage in active and standby modes, respectively. In the active mode, th...
— In three-dimensional (3D) chips, the amount of supply current per package pin is significantly more than in two-dimensional (2D) designs. Therefore, the power supply noise pro...
Pingqiang Zhou, Karthikk Sridharan, Sachin S. Sapa...
The unique and unpredictable nature of silicon enables the use of physical unclonable functions (PUFs) for chip identification and authentication. Since the function of PUFs depen...
Lang Lin, Daniel E. Holcomb, Dilip Kumar Krishnapp...
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...