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TCAD
2010
12 years 12 months ago
2010
Starting from the 90nm technology node, process induced stress has played a key role in the design of highperformance devices. The emergence of source/drain silicon germanium (S/D ...
TCAD
2010
12 years 12 months ago
2010
Abstract--This paper presents a technology mapping algorithm for field-programmable gate array architectures with dual supply voltages (Vdds) for power optimization. This is done w...
TCAD
2010
12 years 12 months ago
2010
Abstract--In double patterning lithography (DPL) layout decomposition for 45nm and below process nodes, two features must be assigned opposite colors (corresponding to different ex...
TCAD
2010
12 years 12 months ago
2010
Abstract--This paper presents a GALS-compatible circuitswitched on-chip network that is well suited for use in many-core platforms targeting streaming DSP and embedded applications...
TCAD
2010
12 years 12 months ago
2010
Three-dimensional integrated circuits (3D-ICs) are a promising approach to address the integration challenges faced by current systems on chips (SoCs). Designing an efficient netwo...