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TCAD
2008
118views more  TCAD 2008»
13 years 5 months ago
Variability-Aware Bulk-MOS Device Design
As CMOS technology is scaled down toward the nanoscale regime, drastically growing leakage currents and variations in device characteristics are becoming two important design chall...
Javid Jaffari, Mohab Anis
ISLPED
2004
ACM
157views Hardware» more  ISLPED 2004»
13 years 10 months ago
4T-decay sensors: a new class of small, fast, robust, and low-power, temperature/leakage sensors
We present a novel temperature/leakage sensor, developed for high-speed, low-power, monitoring of processors and complex VLSI chips. The innovative idea is the use of 4T SRAM cell...
Stefanos Kaxiras, Polychronis Xekalakis
DAC
2004
ACM
13 years 10 months ago
Parametric yield estimation considering leakage variability
Leakage current has become a stringent constraint in today’s processor designs in addition to traditional constraints on frequency. Since leakage current exhibits a strong inver...
Rajeev R. Rao, Anirudh Devgan, David Blaauw, Denni...
ISCAS
2007
IEEE
92views Hardware» more  ISCAS 2007»
13 years 11 months ago
A Study on Impact of Leakage Current on Dynamic Power
— Scaling of CMOS technologies has led to dramatic increase in sub-threshold, gate and reverse biased junction band-to-band-tunneling (BTBT) leakage. Leakage current has now beco...
Ashesh Rastogi, Kunal P. Ganeshpure, Sandip Kundu