DATE
2009
IEEE
13 years 11 months ago
2009
IEEE
—As semiconductor manufacturing enters advanced nanometer design paradigm, aging and device wear-out related degradation is becoming a major concern. Negative Bias Temperature In...
DATE
2009
IEEE
13 years 11 months ago
2009
IEEE
Negative Bias Temperature Instability (NBTI), a PMOS aging phenomenon causing significant loss on circuit performance and lifetime, has become a critical challenge for temporal re...
ISQED
2009
IEEE
13 years 11 months ago
2009
IEEE
—As device feature size continues to shrink, reliability becomes a severe issue due to process variation, particle-induced transient errors, and transistor wear-out/stress such a...
ISQED
2010
IEEE
13 years 11 months ago
2010
IEEE
With the CMOS transistors being scaled to sub 45nm and lower, Negative Bias Temperature Instability (NBTI) has become a major concern due to its impact on PMOS transistor aging pr...