38 search results - page 6 / 8 » A Simulation Methodology in Modeling Cell Divisions with Sto... |
72
Voted
DAC
2008
ACM
15 years 10 months ago
2008
ACM
: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...
ICCD
2007
IEEE
15 years 6 months ago
2007
IEEE
As the VLSI technology marches beyond 65 and 45nm process technologies, variation in gate length has a direct impact on leakage and performance of CMOS transistors. Due to sub-wav...
82
Voted
TWC
2010
14 years 4 months ago
2010
It is known that Wideband Code-Division Multiple Access (W-CDMA) networks are limited by interference more than by any other single effect. Due to the frequency selectivity of the ...
ICCAD
2003
IEEE
15 years 6 months ago
2003
IEEE
Ultra-deep submicron manufacturability impacts physical design (PD) through complex layout rules and large guardbands for process variability; this creates new requirements for ne...
GECCO
2009
Springer
15 years 4 months ago
2009
Springer
VLSI research, in its continuous push toward further miniaturisation, is seeking to break through the limitations of current circuit manufacture techniques by moving towards biomi...