— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
Saraju P. Mohanty, Ramakrishna Velagapudi, Valmiki...
: Academic clock routing research results has often had limited impact on industry practice, since such practical considerations as hierarchical buffering, rise-time and overshoot ...
The implementation of interconnect is becoming a significant challenge in modern IC design. Both synchronous and asynchronous strategies have been suggested to manage this problem...
Bradley R. Quinton, Mark R. Greenstreet, Steven J....
Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high Ion/Ioff, and potential for l...
Soft errors in combinational and sequential elements of digital circuits are an increasing concern as a result of technology scaling. Several techniques for gate and latch hardeni...