2 search results - page 1 / 1 » Behavior-Level Observability Analysis for Operation Gating i... |
84
Voted
TODAES
2010
14 years 11 months ago
2010
147
Voted
ISVLSI
2005
IEEE
15 years 10 months ago
2005
IEEE
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...