With technology scaling down to 90nm and below, many yield-driven design and optimization methodologies have been proposed to cope with the prominent process variation and to incr...
Fang Gong, Hao Yu, Yiyu Shi, Daesoo Kim, Junyan Re...
Starting at the 65-nm node, stress engineering to improve the performance of transistors has been a major industry focus. An intrinsic stress source--shallow trench isolation (STI)...
Andrew B. Kahng, Puneet Sharma, Rasit Onur Topalog...
As CMOS technology scales deeper into the nanometer regime, factors such as leakage power and chip temperature emerge as critically important concerns for high-performance VLSI des...
Due to the inherent nature of heat flow in 3D integrated circuits, stacked dies exhibit a wide range of thermal characteristics. The strong dependence of leakage with temperature...
Process and environmental variations continue to present significant challenges to designers of high-performance integrated circuits. In the past few years, while much research has...
Khaled R. Heloue, Chandramouli V. Kashyap, Farid N...