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DATE
2006
IEEE
142views Hardware» more  DATE 2006»
15 years 5 months ago
Physical-aware simulated annealing optimization of gate leakage in nanoscale datapath circuits
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...
GLVLSI
2009
IEEE
143views VLSI» more  GLVLSI 2009»
15 years 3 months ago
Unified P4 (power-performance-process-parasitic) fast optimization of a Nano-CMOS VCO
In this paper, we present the design of a P4 (Power-PerformanceProcess-Parasitic) aware voltage controlled oscillator (VCO) at nanoCMOS technologies. Through simulations, we have ...
Dhruva Ghai, Saraju P. Mohanty, Elias Kougianos
90
Voted
ISCAS
2007
IEEE
94views Hardware» more  ISCAS 2007»
15 years 6 months ago
Fundamental Bounds on Power Reduction during Data-Retention in Standby SRAM
Abstract— We study leakage-power reduction in standby random access memories (SRAMs) during data-retention. An SRAM cell requires a minimum critical supply voltage (DRV) above wh...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....