4 search results - page 1 / 1 » CMOS logic design with independent-gate FinFETs |
66
Voted
ICCD
2007
IEEE
15 years 6 months ago
2007
IEEE
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS in nano-scale circuits. In this paper, it is observed that in spite of improved device charact...
DAC
2006
ACM
15 years 10 months ago
2006
ACM
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
ASPDAC
2010
ACM
14 years 7 months ago
2010
ACM
This paper describes gate work function and oxide thickness tuning to realize novel circuits using dual-Vth independent-gate FinFETs. Dual-Vth FinFETs with independent gates enabl...
ICCAD
2005
IEEE
15 years 6 months ago
2005
IEEE
: Double-Gate (DG) transistors have emerged as promising devices for nano-scale circuits due to their better scalability compared to bulk CMOS. Among the various types of DG device...