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» Cell architecture for nanoelectronic design
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104
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TVLSI
2010
14 years 8 months ago
SRAM Read/Write Margin Enhancements Using FinFETs
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...
Andrew Carlson, Zheng Guo, Sriram Balasubramanian,...
DAC
1997
ACM
15 years 6 months ago
Developing a Concurrent Methodology for Standard-Cell Library Generation
Abstract - This paper describes the development of a concurrent methodology for standard cell library generation. Use of a novel physical design automation method enables a high de...
Donald G. Baltus, Thomas Varga, Robert C. Armstron...
97
Voted
ASPDAC
2000
ACM
104views Hardware» more  ASPDAC 2000»
15 years 6 months ago
Design of digital neural cell scheduler for intelligent IB-ATM switch
— We present the architecture of the ATM banyan switch composed of pattern process and high-speed digital neural cell scheduler. An input buffer type ATM switch with a window-bas...
J.-K. Lee, Seung-Min Lee, Mike Myung-Ok Lee, D.-W....
DAC
2007
ACM
16 years 2 months ago
Gate Sizing For Cell Library-Based Designs
With increasing time-to-market pressure and shortening semiconductor product cycles, more and more chips are being designed with library-based methodologies. In spite of this shif...
Shiyan Hu, Mahesh Ketkar, Jiang Hu
DAC
2010
ACM
15 years 5 months ago
SRAM-based NBTI/PBTI sensor system design
NBTI has been a major aging mechanism for advanced CMOS technology and PBTI is also looming as a big concern. This work first proposes a compact on-chip sensor design that tracks ...
Zhenyu Qi, Jiajing Wang, Adam C. Cabe, Stuart N. W...