: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...
Jing Li, Charles Augustine, Sayeef S. Salahuddin, ...
It is known that ramp-based models are not sufficient for accurate timing modeling. In this paper, we develop a technique that accurately models the waveforms, and also allows a f...
Anand Ramalingam, Ashish Kumar Singh, Sani R. Nass...
Current technology trends have led to the growing impact of both inter-die and intra-die process variations on circuit performance. While it is imperative to model parameter varia...
Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional...
Power gating is one of the most effective ways to reduce leakage power. In this paper, we introduce a new relationship among Maximum Instantaneous Current, IR drops and sleep tran...