111 search results - page 7 / 23 » Correlation Power Analysis with a Leakage Model |
ICCAD
2006
IEEE
15 years 8 months ago
2006
IEEE
— For 65nm and below devices, even after optical proximity correction (OPC), the gate may still be non-rectangular. There are several limited works on the device and circuit char...
CARDIS
2004
Springer
15 years 5 months ago
2004
Springer
CMOS gates consume different amounts of power whether their output has a falling or a rising edge. Therefore the overall power consumption of a CMOS circuit leaks information about...
CHES
2003
Springer
15 years 4 months ago
2003
Springer
We introduce multi-channel attacks, i.e., side-channel attacks which utilize multiple side-channels such as power and EM simultaneously. We propose an adversarial model which combi...
DATE
2005
IEEE
15 years 5 months ago
2005
IEEE
The purpose of this paper is to formally specify a flow devoted to the design of Differential Power Analysis (DPA) resistant QDI asynchronous circuits. The paper first proposes a ...
88
Voted
ICCAD
1994
IEEE
15 years 3 months ago
1994
IEEE
This work presents techniques for computing the switching activities of all circuit nodes under pseudorandom or biased input sequences and assuming a zero delay mode of operation....