ESD protection design for CMOS RF integrated circuits is proposed in this paper by using the stacked polysilicon diodes as the input ESD protection devices to reduce the total inp...
The scaling of CMOS technology into the nanometer era enables the fabrication of highly integrated systems, which increasingly contain analog and/or RF parts. However, scaling into...
With aggressive reductions in feature sizes and the integration of multiple functionalities on the same die, bottlenecks due to I/O pin limitations have become a severe issue in to...
—Clock jitter and its effects on signal-to-noise ratio (SNR) were widely investigated in the published literatures. However, most of the issues mainly focused on white-Gaussian-n...
—A new biasing technique called “local biasing” of transistors is used to design analog integrated circuit amplifiers, or any other analog ICs. The technique is based on desi...