Abstract—This work proposes reliability aware through silicon via (TSV) planning for the 3D stacked silicon integrated circuits (ICs). The 3D power distribution network is modele...
Amirali Shayan Arani, Xiang Hu, He Peng, Chung-Kua...
— Negative Bias Temperature Instability (NBTI) has the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devices due to its deleterious ...
Sanjay V. Kumar, Chris H. Kim, Sachin S. Sapatneka...
Abstract — Nanoelectronic design faces unprecedented reliability challenges and must achieve noise immunity and delay insensitiveness in the presence of prevalent defects and sig...
Graphene nanoribbon tunneling FETs (GNR TFETs) are promising devices for post-CMOS low-power applications because of the low subthreshold swing, high Ion/Ioff, and potential for l...
Design for specific customer service plays a crucial role for the majority of the market in modern electronics. However, adaptability to an individual customer results in increasi...