As CMOS technology scales deeper into the nanometer regime, factors such as leakage power and chip temperature emerge as critically important concerns for VLSI design. This paper,...
TheRFdesignparadigm will changesignificantly asCMOS technology scales and integration levels rise to accommodate multi-band, multi-mode transceivers and baseband processors. This...
Traditionally, active power has been the primary source of power dissipation in CMOS designs. Although, leakage power is becoming increasingly more important as technology feature...
Electrothermal couplings between supply voltage, operating frequency, power dissipation and die temperature have been shown to significantly impact the energy-delay-product (EDP) ...
Anirban Basu, Sheng-Chih Lin, Vineet Wason, Amit M...
Leakage power is a serious concern in nanometer CMOS technologies. In this paper we focus on leakage reduction through automatic insertion of sleep transistors for power gating in...
Ashoka Visweswara Sathanur, Antonio Pullini, Luca ...