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VLSID
2008
IEEE
111views VLSI» more  VLSID 2008»
15 years 9 months ago
Power Reduction of Functional Units Considering Temperature and Process Variations
Continuous technology scaling has resulted in an increase in both, the power density as well as the variation in device dimensions (process variations) of the manufactured process...
Deepa Kannan, Aviral Shrivastava, Sarvesh Bhardwaj...
DATE
2002
IEEE
156views Hardware» more  DATE 2002»
15 years 2 months ago
Dynamic VTH Scaling Scheme for Active Leakage Power Reduction
We present a Dynamic VTH Scaling (DVTS) scheme to save the leakage power during active mode of the circuit. The power saving strategy of DVTS is similar to that of the Dynamic VDD...
Chris H. Kim, Kaushik Roy
DATE
2009
IEEE
135views Hardware» more  DATE 2009»
15 years 4 months ago
Gate replacement techniques for simultaneous leakage and aging optimization
—1As technology scales, the aging effect caused by Negative Bias Temperature Instability (NBTI) has become a major reliability concern for circuit designers. On the other hand, r...
Yu Wang 0002, Xiaoming Chen, Wenping Wang, Yu Cao,...
VLSID
2008
IEEE
142views VLSI» more  VLSID 2008»
15 years 9 months ago
Temperature and Process Variations Aware Power Gating of Functional Units
Technology scaling has resulted in an exponential increase in the leakage power as well as the variations in leakage power of fabricated chips. Functional units (FUs), like Intege...
Deepa Kannan, Aviral Shrivastava, Vipin Mohan, Sar...
DAC
2002
ACM
15 years 10 months ago
Dynamic and leakage power reduction in MTCMOS circuits using an automated efficient gate clustering technique
Reducing power dissipation is one of the most principle subjects in VLSI design today. Scaling causes subthreshold leakage currents to become a large component of total power diss...
Mohab Anis, Mohamed Mahmoud, Mohamed I. Elmasry, S...