82 search results - page 12 / 17 » Low threshold CMOS circuits with low standby current |
ISVLSI
2005
IEEE
15 years 5 months ago
2005
IEEE
— Direct tunneling current is the major component of static power dissipation of a CMOS circuit for technology below 65nm, where the gate dielectric (SiO2) is very low. We intuit...
GLVLSI
2009
IEEE
15 years 6 months ago
2009
IEEE
This paper introduces pass-transistor logic design with dualthreshold voltages. A set of single-rail, fully restored, passtransistor gates are presented. Logic transistors are imp...
ASPDAC
2009
ACM
15 years 4 months ago
2009
ACM
— In three-dimensional (3D) chips, the amount of supply current per package pin is significantly more than in two-dimensional (2D) designs. Therefore, the power supply noise pro...
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VLSID
2006
IEEE
16 years 1 days ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
ISCAS
2005
IEEE
15 years 5 months ago
2005
IEEE
—This paper presents a 2GHz 8-bit CMOS ROM-less direct digital frequency synthesizer (DDFS). Nonlinear current steering digital to analog converter (DAC) has been utilized to con...