A new circuit technique based on a single PMOS sleep transistor and a dual threshold voltage CMOS technology is proposed in this paper for simultaneously reducing subthreshold and...
With technology scaling, power supply and threshold voltage continue to decrease to satisfy high performance and low power requirements. In the past, subthreshold CMOS circuits ha...
Alice Wang, Anantha Chandrakasan, Stephen V. Koson...
The ITRS (International Technology Roadmap for Semiconductors) predicts aggressive scaling down of device size, transistor threshold voltage and oxide thickness to meet growing de...
The state dependence of leakage can be exploited to obtain modest leakage savings in CMOS circuits. However, one can modify circuits considering state dependence and achieve large...
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...