TheRFdesignparadigm will changesignificantly asCMOS technology scales and integration levels rise to accommodate multi-band, multi-mode transceivers and baseband processors. This...
This paper presents the design and the laboratory results of an integrated half-bridge driver for power electronic systems in a 0.35 µm Bipolar CMOS DMOS (BCD) technology. The pr...
Francesco D'Ascoli, Luca Bacciarelli, Massimiliano...
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...
In this paper we propose a novel integrated circuit and architectural level technique to reduce leakage power consumption in high performance cache memories using single Vt (trans...
With scaling down to deep submicron and nanometer technologies, noise immunity is becoming a metric of the same importance as power, speed, and area. Smaller feature sizes, low vo...