105 search results - page 1 / 21 » Modeling and Simulation |
ICCAD
2001
IEEE
15 years 10 months ago
2001
IEEE
This paper presents a method to automatically generate posynomial response surface models for the performance parameters of analog integrated circuits. The posynomial models enabl...
ICCAD
2006
IEEE
15 years 10 months ago
2006
IEEE
— For 65nm and below devices, even after optical proximity correction (OPC), the gate may still be non-rectangular. There are several limited works on the device and circuit char...
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ICCAD
2001
IEEE
15 years 10 months ago
2001
IEEE
We present a methodology for generating black-box timing models for full-custom transistor-level CMOS circuits. Our approach utilizes transistor-level ternary symbolic timing simu...
ICCAD
1996
IEEE
15 years 5 months ago
1996
IEEE
Although numerous methods have been proposed for interconnect simulation, no single model exists for all kind of transmission line problems. This paper presents a new, single, gen...
ICCAD
2003
IEEE
15 years 10 months ago
2003
IEEE
Carbon Nanotube Field-Effect Transistors (CNFETs) are being extensively studied as possible successors to CMOS. Novel device structures have been fabricated and device simulators ...