5190 search results - page 933 / 1038 » Multithreaded Parallel Computer Model with Performance Evalu... |
105
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HPCA
2006
IEEE
15 years 10 months ago
2006
IEEE
As silicon technologies move into the nanometer regime, transistor reliability is expected to wane as devices become subject to extreme process variation, particle-induced transie...
DSN
2004
IEEE
15 years 1 months ago
2004
IEEE
Advanced molecular nanotechnology devices are expected to have exceedingly high transient fault rates and large numbers of inherent device defects compared to conventional CMOS de...
104
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HPCA
2009
IEEE
15 years 10 months ago
2009
IEEE
Magnetic Random Access Memory (MRAM) is considered to be a promising future memory technology due to its low leakage power, high density and fast read speed. The heterogeneous int...
105
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ICDCSW
2005
IEEE
15 years 3 months ago
2005
IEEE
Congestion in the Internet results in wasted bandwidth and also stands in the way of guaranteeing QoS. The effect of congestion is multiplied many fold in Satellite networks, wher...
DATE
2008
IEEE
15 years 4 months ago
2008
IEEE
— As the feature size of transistors gets smaller, fabricating them becomes challenging. Manufacturing process follows various corrective design-for-manufacturing (DFM) steps to ...