4 search results - page 1 / 1 » Rewriting codes for joint information storage in flash memor... |
66
Voted
TIT
2010
14 years 4 months ago
2010
Abstract--Memories whose storage cells transit irreversibly between states have been common since the start of the data storage technology. In recent years, flash memories have bec...
CORR
2010
Springer
14 years 7 months ago
2010
Springer
Abstract--Flash memory is well-known for its inherent asymmetry: the flash-cell charge levels are easy to increase but are hard to decrease. In a general rewriting model, the store...
86
Voted
TIT
2010
14 years 4 months ago
2010
NAND flash memories are currently the most widely used type of flash memories. In a NAND flash memory, although a cell block consists of many pages, to rewrite one page, the whole ...
137
Voted
CODES
2008
IEEE
15 years 4 hour ago
2008
IEEE
Memory subsystems have been considered as one of the most critical components in embedded systems and furthermore, displaying increasing complexity as application requirements div...