97 search results - page 7 / 20 » SRAM Cell Current in Low Leakage Design |
ITC
1997
IEEE
15 years 3 months ago
1997
IEEE
The detection of cell stability and data retention faults in SRAMs has been a time consuming process. In this paper we discuss a new design for test technique called Weak Write Tes...
TVLSI
2010
14 years 6 months ago
2010
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...
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HPCA
2011
IEEE
14 years 3 months ago
2011
IEEE
Extreme technology integration in the sub-micron regime comes with a rapid rise in heat dissipation and power density for modern processors. Dynamic voltage scaling is a widely us...
ASPDAC
2004
ACM
15 years 5 months ago
2004
ACM
— Reducing the ever-growing leakage power is critical to power efficient designs. Leakage reduction techniques such as power-gating using sleep transistor insertion introduces la...
ISCA
2002
IEEE
15 years 4 months ago
2002
IEEE
Leakage power is dominated by critical paths, and hence dynamic deactivation of fast transistors can yield large savings. We introduce metrics for comparing fine-grain dynamic de...