234 search results - page 17 / 47 » Scaling, Power and the Future of CMOS |
VLSID
2006
IEEE
15 years 10 months ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
GLVLSI
2007
IEEE
15 years 4 months ago
2007
IEEE
Leakage power dissipation is one of the most critical factors for the overall current dissipation and future designs. However, design techniques for the reduction of leakage power...
TVLSI
2010
14 years 4 months ago
2010
Digital calibration techniques are widely utilized to linearize pipelined analog-to-digital converters (ADCs). However, their power dissipation can be prohibitively high, particula...
CORR
2008
Springer
14 years 9 months ago
2008
Springer
A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important...
ICCD
2007
IEEE
15 years 6 months ago
2007
IEEE
As chip multiprocessors (CMPs) become the only viable way to scale up and utilize the abundant transistors made available in current microprocessors, the design of on-chip network...