: Future nano scale devices will expose different characteristics than todays silicon devices. While the exponential growth of non recurring expenses (NRE, mostly due to mask sets)...
— As silicon CMOS devices are scaled down into the nanoscale regime, new challenges at both the device and system level are arising. While some of these challenges will be overco...
As CMOS scales beyond the 45nm technology node, leakage concerns are starting to limit microprocessor performance growth. To keep dynamic power constant across process generations...
Abstract— Interconnect has become a primary bottleneck in integrated circuit design. As CMOS technology is scaled, it will become increasingly difficult for conventional copper ...
Graphene nanoribbon FETs (GNRFETs) are promising devices for beyond-CMOS nanoelectronics because of their excellent carrier transport properties and potential for large scale proc...
Mihir R. Choudhury, Youngki Yoon, Jing Guo, Kartik...