23 search results - page 4 / 5 » Simultaneous Control of Subthreshold and Gate Leakage Curren... |
TIM
2010
13 years 1 months ago
2010
In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the ...
SBCCI
2005
ACM
13 years 12 months ago
2005
ACM
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
ISCAS
2006
IEEE
14 years 13 days ago
2006
IEEE
In this paper we present two polynomial time-complexity heuristic algorithms for optimization of gate-oxide leakage (tunneling current) during behavioral synthesis through simulta...
DATE
2006
IEEE
14 years 15 days ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
ISQED
2006
IEEE
14 years 13 days ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...