23 search results - page 5 / 5 » Simultaneous Control of Subthreshold and Gate Leakage Curren... |
TVLSI
2008
13 years 6 months ago
2008
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
DAC
2006
ACM
14 years 7 months ago
2006
ACM
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
DATE
2009
IEEE
14 years 1 months ago
2009
IEEE
— Clock-gating and power-gating have proven to be very effective solutions for reducing dynamic and static power, respectively. The two techniques may be coupled in such a way th...