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DAC
2005
ACM
15 years 10 months ago
Full-chip analysis of leakage power under process variations, including spatial correlations
In this paper, we present a method for analyzing the leakage current, and hence the leakage power, of a circuit under process parameter variations that can include spatial correla...
Hongliang Chang, Sachin S. Sapatnekar
VLSID
2007
IEEE
120views VLSI» more  VLSID 2007»
15 years 10 months ago
Statistical Leakage and Timing Optimization for Submicron Process Variation
Leakage power is becoming a dominant contributor to the total power consumption and dual-Vth assignment is an efficient technique to decrease leakage power, for which effective de...
Yuanlin Lu, Vishwani D. Agrawal
GLVLSI
2009
IEEE
143views VLSI» more  GLVLSI 2009»
15 years 1 months ago
Unified P4 (power-performance-process-parasitic) fast optimization of a Nano-CMOS VCO
In this paper, we present the design of a P4 (Power-PerformanceProcess-Parasitic) aware voltage controlled oscillator (VCO) at nanoCMOS technologies. Through simulations, we have ...
Dhruva Ghai, Saraju P. Mohanty, Elias Kougianos
DATE
2006
IEEE
142views Hardware» more  DATE 2006»
15 years 3 months ago
Physical-aware simulated annealing optimization of gate leakage in nanoscale datapath circuits
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...
ISQED
2006
IEEE
109views Hardware» more  ISQED 2006»
15 years 3 months ago
Dual-K Versus Dual-T Technique for Gate Leakage Reduction : A Comparative Perspective
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
Saraju P. Mohanty, Ramakrishna Velagapudi, Elias K...