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50
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CORR
2010
Springer
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CORR 2010
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Statistical Modelling of ft to Process Parameters in 30 nm Gate Length Finfets
15 years 3 months ago
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airccse.org
This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometric...
B. Lakshmi, R. Srinivasan
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