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117
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VLSID
2007
IEEE
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VLSI
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VLSID 2007
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Metrics to Quantify Steady and Transient Gate Leakage in Nanoscale Transistors: NMOS vs. PMOS Perspective
16 years 3 months ago
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www.cse.unt.edu
In this paper we explore the use of a set of novel design metrics for characterizing the impact of gate oxide tunneling current in nanometer CMOS devices and perform Monte Carlo s...
Elias Kougianos, Saraju P. Mohanty
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