DATE
2009
IEEE
15 years 3 months ago
2009
IEEE
—As semiconductor manufacturing enters advanced nanometer design paradigm, aging and device wear-out related degradation is becoming a major concern. Negative Bias Temperature In...
DATE
2009
IEEE
15 years 3 months ago
2009
IEEE
Negative Bias Temperature Instability (NBTI), a PMOS aging phenomenon causing significant loss on circuit performance and lifetime, has become a critical challenge for temporal re...
ISQED
2009
IEEE
15 years 3 months ago
2009
IEEE
—As device feature size continues to shrink, reliability becomes a severe issue due to process variation, particle-induced transient errors, and transistor wear-out/stress such a...
ISQED
2010
IEEE
15 years 3 months ago
2010
IEEE
With the CMOS transistors being scaled to sub 45nm and lower, Negative Bias Temperature Instability (NBTI) has become a major concern due to its impact on PMOS transistor aging pr...