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129
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ICCAD
2010
IEEE
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ICCAD 2010
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Stress-driven 3D-IC placement with TSV keep-out zone and regularity study
15 years 22 days ago
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www.cerc.utexas.edu
Through-silicon via (TSV) fabrication causes tensile stress around TSVs which results in significant carrier mobility variation in the devices in their neighborhood. Keep-out zone ...
Krit Athikulwongse, Ashutosh Chakraborty, Jae-Seok...
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