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ETS
2010
IEEE
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ETS 2010
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Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes
15 years 2 months ago
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hal-lirmm.ccsd.cnrs.fr
ÑIn this paper, we present a comparative study on the effects of resistive-bridging defects in the SRAM core-cells, considering different technology nodes. In particular, we analy...
Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio,...
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