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121
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ICCD
2006
IEEE
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ICCD 2006
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Steady and Transient State Analysis of Gate Leakage Current in Nanoscale CMOS Logic Gates
16 years 13 days ago
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iccd.et.tudelft.nl
Abstract— Gate leakage (direct tunneling current for sub65nm CMOS) can severely affect both the transient and steady state behaviors of CMOS circuits. In this paper we quantify t...
Saraju P. Mohanty, Elias Kougianos
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