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72
Voted
MJ
2008
148views more  MJ 2008»
14 years 10 months ago
Drive current boosting of n-type tunnel FET with strained SiGe layer at source
Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60 mV/decade subthreshold swing and very small OFF current (IOFF), its practical application i...
Nayan Patel, A. Ramesha, Santanu Mahapatra
94
Voted
ISLPED
2009
ACM
168views Hardware» more  ISLPED 2009»
15 years 4 months ago
Low power circuit design based on heterojunction tunneling transistors (HETTs)
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...