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    GLVLSI
    2010
    IEEE
    150views VLSI» more  GLVLSI 2010»
    Reliability analysis of power gated SRAM under combined effects of NBTI and PBTI in nano-scale CMOS
    14 years 11 months ago
    Reliability analysis of power gated SRAM under combined effects of NBTI and PBTI in nano-scale CMOS
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    Transistor aging effects (NBTI and PBTI) impact the reliability of SRAM in nano-scale CMOS technologies. In this research, the combined effect of NBTI and PBTI on power gated SRAM...
    Anuj Pushkarna, Hamid Mahmoodi
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