Synthesis of a wideband low noise amplifier

Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. The first generation design was fabricated in a 0.35 µm SiGe BiCMOS process. It has a measured peak S21 of 17 dB and noise figure less than 3 dB over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The calculated figure of merit (FOM) is better than many reported wideband LNAs, including a few from even more advanced processes. The synthesis design constraints were improved based on the analysis of the first generation design. A second generation design was synthesized with the updated constraints. Its simulation results show that its FOM is better than its predecessor. Categories and Subject Descriptors B.7.1 [Integrated Circuits]: Types and Design Styles - Advanced Technologies General Terms Design Keywords Synthesis, Wideband LNA, RFIC

• Type: Conference
• Year: 2006
• Where: GLVLSI
• Authors: Abhishek Jajoo, Michael Sperling, Tamal Mukherjee
• Keywords: Generation Design, GLVLSI 2006, VLSI, Wideband Lna, Wideband Low Noise