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ISQED
2003
IEEE

Analyzing Internal-Switching Induced Simultaneous Switching Noise

10 years 3 months ago
Analyzing Internal-Switching Induced Simultaneous Switching Noise
The internal-switching induced simultaneous switching noise (SSN) is studied in the paper. Unlike ground bounce caused by driving off-chip loading, both power-rail and ground-rail wire/pin impedances are important in evaluating internal SSN, and the double negative feedback mechanism should be accounted for. Based on the lumped-model analysis and taking into account the parasitic effects and velocity-saturation effect of MOS transistors, a novel analytical model is developed which includes both switching and non-switching gates. The proposed model is employed to analyze on-chip decoupling capacitance, wire/pin inductance effect and loading effect analytically. Good agreements with SPICE simulations are obtained for submicron technology.
Li Yang, J. S. Yuan
Added 04 Jul 2010
Updated 04 Jul 2010
Type Conference
Year 2003
Where ISQED
Authors Li Yang, J. S. Yuan
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