Reliability and Yield: A Joint Defect-Oriented Approach

We present a model for computing the probability of a parametric failure due to a spot defect. The analysis is based on electromigration in conductors under unidirectional current stress. Analytical solution is given for simple layout and simulations for a more complicated case. Then we show that in some cases electromigration-dependent parametric defects can make a significant contribution to the total yield estimation.

• Type: Conference
• Year: 2004
• Where: DFT
• Authors: Roman Barsky, Israel A. Wagner
• Keywords: DFT 2004, Electromigration-dependent Parametric Defects, Parametric Failure, Unidirectional Current Stress, VLSI