Statistical Modeling With the PSP MOSFET Model

PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.

• Type: Journal
• Year: 2010
• Where: TCAD
• Authors: Xin Li, Colin C. McAndrew, Weimin Wu, Samir Chaudhry, James Victory, Gennady Gildenblat
• Keywords: BPV Statistical Modeling, Metal-oxide-semiconductor Field Effect, Oscillator Gate Delays, Software Engineering, TCAD 2010