5 search results - page 1 / 1 » A Dual Dielectric Approach for Performance Aware Gate Tunnel... |
ICCD
2005
IEEE
14 years 1 months ago
2005
IEEE
ISQED
2006
IEEE
13 years 11 months ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
SBCCI
2005
ACM
13 years 10 months ago
2005
ACM
Gate oxide tunneling current Igate and sub-threshold current Isub dominate the leakage of designs. The latter depends on threshold voltage Vth while Igate vary with the thickness ...
ASPDAC
2009
ACM
13 years 11 months ago
2009
ACM
— Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a major reliability concern in present-day digital circuit design. Further, with the recent usage of...
DAC
2008
ACM
13 years 6 months ago
2008
ACM
Clock skew scheduling has been traditionally considered as a tool for improving the clock period in a sequential circuit. Timing slack is "stolen" from fast combinationa...